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FCMT080N65S3 N-Channel MOSFET rated for 650V drain-source voltage and 38A continuous drain current. Surface mount in a 4-TDFN package.
Mfr Part #:

FCMT080N65S3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 650V drain-source voltage and 38A continuous drain current. Surface mount in a 4-TDFN package.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.80 - $7.36

FCMT080N65S3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FCMT080N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCMT080N65S3 Description

Short technical summary and product information.

The FCMT080N65S3 is an N-Channel MOSFET from On Semiconductor, designed for high-voltage power switching applications. It features a drain-to-source breakdown voltage of 650V and a continuous drain current rating of 38A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 80mOhm at 19A and 10V gate drive, a maximum gate charge of 71nC at 10V, and an input capacitance of 2765pF at 400V drain-source voltage. The device is capable of dissipating up to 260W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is housed in a 4-PowerTSFN surface mount package with a supplier device package of 4-TDFN (8x8). It is suitable for power conversion and switching circuits requiring high voltage and moderate current handling.

FCMT080N65S3 Quick Information

Product Type: MOSFET
Canonical Name: FCMT080N65S3 N-Channel MOSFET
Subcategory: Single MOSFET

FCMT080N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCMT080N65S3 Estimated Pricing

Qty Low High
1+ $7.36 $7.36
10+ $4.96 $4.96
50+ $3.94 $3.94
100+ $3.61 $3.61
500+ $3.43 $3.43
3,000+ $2.80 $2.80

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCMT080N65S3 Features

  • 650V drain-source breakdown voltage.
  • 38A continuous drain current rating.
  • 80mOhm maximum on-resistance at 10V.
  • Surface mount 4-TDFN (8x8) package.
  • Operates from -55°C to 150°C junction temperature.

FCMT080N65S3 Applications

  • Used in high-voltage power supply circuits.
  • Suitable for AC-DC converter designs.
  • Ideal for motor control applications.
  • Applied in switching regulator topologies.

FCMT080N65S3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCMT080N65S3?

The drain-source breakdown voltage is 650V minimum.

What is the maximum continuous drain current?

The maximum continuous drain current is 38A at 25°C case temperature.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FCMT080N65S3 come in?

It comes in a 4-PowerTSFN surface mount package, specifically a 4-TDFN (8x8).

Is the FCMT080N65S3 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.

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