| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,170 pcs
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1170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCHD190N65S3R0 is an N-Channel power MOSFET from onsemi's SUPERFET III Easy Drive family. It utilizes charge balance technology to achieve a typical on-resistance of 159 mΩ and ultra low gate charge of 33 nC, enabling efficient switching in high-voltage applications. The device is rated for a maximum drain-source voltage of 650 V and continuous drain current of 17 A at Tc = 25°C (11 A at 100°C).
It offers enhanced ruggedness with 100% avalanche testing, supporting a single pulse avalanche energy of 76 mJ and a maximum MOSFET dv/dt of 100 V/ns. The device is designed to manage EMI and simplify design implementation, making it suitable for power supply topologies.
The part is supplied in a TO-247-3 through-hole package (TO-247AD case code), mounted via through-hole, and packed in tubes of 30 units.
The maximum drain-source voltage (VDSS) is 650 V.
The continuous drain current is 17 A at Tc = 25°C (maximum).
The maximum on-resistance is 190 mΩ at Vgs = 10 V and Id = 8.5 A. Typical on-resistance is 159 mΩ.
The operating junction temperature range is -55°C to 150°C.
It uses a TO-247-3 (TO-247AD) through-hole package.
Yes, it is RoHS3 compliant (verified from datasheet). It is also Pb-Free and Halogen Free/BFR Free.
The maximum gate threshold voltage is 4.5 V at Id = 390 µA.