FCHD125N65S3R0-F155 N-channel power MOSFET rated at 650V drain-source voltage and 24A continuous drain current with 125mΩ typical on-resistance.
Mfr Part #:

FCHD125N65S3R0-F155

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-channel power MOSFET rated at 650V drain-source voltage and 24A continuous drain current with 125mΩ typical on-resistance.
✓ Total Stock: 4,590 pcs
$ Price Range: $2.20

FCHD125N65S3R0-F155 Available from 1 distributor

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✓ Non-Authorised
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4,590 pcs
4590 pcs On Request 1 On Request On Request On Request On Request On Request

FCHD125N65S3R0-F155 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCHD125N65S3R0-F155 Description

Short technical summary and product information.

The FCHD125N65S3R0-F155 is a 650V, 24A N-channel SuperFET III Easy Drive MOSFET from onsemi. It features a maximum drain-source voltage of 650V (700V at Tj=150°C) and a continuous drain current of 24A at Tc=25°C (15A at Tc=100°C). The device offers a typical on-resistance of 105mΩ (maximum 125mΩ at Id=12A, Vgs=10V).

 

Key electrical characteristics include a typical total gate charge of 46nC and a typical effective output capacitance of 439pF, enabling efficient switching performance. The MOSFET supports a maximum gate-source voltage of ±30V and has a gate threshold voltage range up to 4.5V at Id=590µA. It is avalanche-rated with single-pulse avalanche energy of 115mJ at 3.7A.

 

The device is supplied in a through-hole TO-247-3 package (TO-247AD case) and is Pb-free, halogen-free/BFR-free, and RoHS compliant. This MOSFET is suitable for telecom/server power supplies, industrial power supplies, UPS, and solar applications.

FCHD125N65S3R0-F155 Quick Information

Product Type: MOSFET
Series: Easy Drive
Canonical Name: FCHD125N65S3R0-F155
Subcategory: N-Channel Superjunction MOSFET

FCHD125N65S3R0-F155 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCHD125N65S3R0-F155 Estimated Pricing

Qty Low High
300+ $2.20 $2.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCHD125N65S3R0-F155 Features

  • 650V drain-source voltage rating.
  • 24A continuous drain current at 25°C.
  • Low typical on-resistance of 105mΩ.
  • Low typical gate charge of 46nC.
  • Pb-free and RoHS compliant.

FCHD125N65S3R0-F155 Applications

  • Used in telecom and server power supplies.
  • Suitable for industrial power supplies.
  • Applicable in UPS and solar systems.

FCHD125N65S3R0-F155 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCHD125N65S3R0-F155?

The maximum drain-source voltage is 650V.

What is the continuous drain current at Tc=25°C?

The continuous drain current at Tc=25°C is 24A.

What is the on-resistance?

The maximum on-resistance is 125mΩ at Id=12A, Vgs=10V; typical is 105mΩ.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does this device come in?

The device is in a TO-247-3 (TO-247AD) through-hole package.

Is the FCHD125N65S3R0-F155 RoHS compliant?

Yes, the datasheet states the devices are RoHS compliant and Pb-free.

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