Mfr Part #:

FCHD040N65S3-F155

N-Channel MOSFET from On Semiconductor's SUPERFET III Easy Drive series. Rated for 650V drain-source voltage, 65A continuous current, and 40mΩ on-resistance in a TO-247-3 through-hole package.

✓ Total Stock: 1,200 pcs

$ Price Range: $5.04 - $13.68

FCHD040N65S3-F155 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	1,200 pcs On Request	1200 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FCHD040N65S3-F155 Description

Short technical summary and product information.

The FCHD040N65S3-F155 is an N-Channel power MOSFET from On Semiconductor's SUPERFET III Easy Drive series. It utilizes charge balance technology to achieve low on-resistance and low gate charge, enabling efficient switching in high-voltage applications. The device is rated for a maximum drain-source voltage of 650V (700V at Tj=150°C) and a continuous drain current of 65A at 25°C (41A at 100°C). The typical on-resistance is 35.4mΩ with a maximum of 40mΩ at Vgs=10V and Id=32.5A. Gate charge is typically 136nC, and input capacitance is 4740pF at Vds=400V.

This MOSFET is designed for applications such as telecom/server power supplies, industrial power supplies, UPS, and solar inverters. It features low effective output capacitance (1154pF) and is 100% avalanche tested. The device can withstand high dv/dt rates (100 V/ns for MOSFET, 20 V/ns for diode recovery).

The FCHD040N65S3-F155 is housed in a TO-247-3 through-hole package, suitable for high-power designs. It is RoHS compliant, Pb-Free, and Halogen Free/BFR Free. The standard packing method is tube with 30 units per tube.

FCHD040N65S3-F155 Quick Information

Product Type: MOSFET (Metal Oxide)

Series: Easy Drive

Canonical Name: FCHD040N65S3-F155 – N-Channel MOSFET, 650V, 65A, 40mΩ, TO-247-3

Subcategory: N-Channel Power MOSFET

FCHD040N65S3-F155 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FCHD040N65S3-F155 Estimated Pricing

Qty	Low	High
1+	$13.68	$13.68
120+	$5.04	$5.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCHD040N65S3-F155 Features

650V drain-source voltage rating.
65A continuous drain current at 25°C.
40mΩ maximum on-resistance at 10V gate drive.
Low gate charge of 136nC typical.
TO-247-3 through-hole package.

FCHD040N65S3-F155 Applications

Used in telecom and server power supplies.
Suitable for industrial power supply designs.
Ideal for UPS and solar inverter applications.

FCHD040N65S3-F155 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

650V maximum at 25°C, 700V typical at 150°C.

What package does the FCHD040N65S3-F155 come in?

TO-247-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FCHD040N65S3-F155 RoHS compliant?

Yes, it is RoHS compliant and Pb-Free.

What is the gate charge of this MOSFET?

136 nC typical at Vgs=10V.

What is the on-resistance?

40 mΩ maximum at Vgs=10V, Id=32.5A; typical 35.4 mΩ.

What is the avalanche energy rating?

Single pulse avalanche energy 358 mJ at IAS=8.1A.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	65 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	136 nC @ 10 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	4740 pF
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	417 W
Rds On (Max) @ Id, Vgs	40mOhm @ 32.5A, 10V
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Termination Style	Through Hole
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	4.5 V