FCH76N60N The FCH76N60N is an N-Channel MOSFET from On Semiconductor with a 600V drain-source voltage rating and 76A continuous drain current. It features a low typical on-resistance of 28 mOhm and is housed in a TO-247-3 through-hole package.
Mfr Part #:

FCH76N60N

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FCH76N60N is an N-Channel MOSFET from On Semiconductor with a 600V drain-source voltage rating and 76A continuous drain current. It features a low typical on-resistance of 28 mOhm and is housed in a TO-247-3 through-hole package.
✓ Total Stock: 4,505 pcs
$ Price Range: $5.75

FCH76N60N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,005 pcs
2005 pcs On Request 1 On Request On Request 24+ On Request On Request

FCH76N60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCH76N60N Description

Short technical summary and product information.

The FCH76N60N is an N-Channel MOSFET from On Semiconductor, part of the SUPREMOS super-junction technology family. It is designed for high-frequency switching power converter applications.

 

Key electrical specifications include a maximum drain-to-source voltage of 600V, a continuous drain current of 76A at 25°C case temperature, and a maximum on-resistance of 36 mOhm at 38A and 10V gate drive. The device offers a typical gate charge of 218 nC and a maximum input capacitance of 12385 pF, enabling efficient switching performance.

 

The MOSFET is 100% avalanche tested, with a single pulsed avalanche energy rating of 8022 mJ. It is housed in a TO-247-3 through-hole package and is rated for an operating junction temperature range of -55°C to 150°C.

FCH76N60N Quick Information

Product Type: MOSFET
Canonical Name: FCH76N60N N-Channel MOSFET
Subcategory: Single MOSFET

FCH76N60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCH76N60N Estimated Pricing

Qty Low High
1+ $5.75 $5.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCH76N60N Features

  • 600V drain-source voltage rating.
  • 76A continuous drain current.
  • Low 28 mOhm typical on-resistance.
  • Ultra low gate charge of 218 nC.
  • 100% avalanche tested for ruggedness.

FCH76N60N Applications

  • Solar inverter power conversion circuits.
  • AC-DC power supply designs.
  • High frequency switching converters.
  • PFC and server/telecom power supplies.

FCH76N60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCH76N60N?

The maximum drain-source voltage (Vdss) is 600 V.

What is the continuous drain current rating of the FCH76N60N?

The continuous drain current is 76 A at Tc=25°C and 48.1 A at Tc=100°C.

What is the on-resistance of the FCH76N60N?

The maximum on-resistance is 36 mOhm at Id=38A and Vgs=10V, with a typical value of 28 mOhm.

What package does the FCH76N60N come in?

The FCH76N60N is housed in a TO-247-3 through-hole package.

What is the operating temperature range of the FCH76N60N?

The operating junction temperature range is -55°C to 150°C.

Is the FCH76N60N RoHS compliant?

The datasheet states the device is Pb-Free and RoHS Compliant, though this is not independently verified.

What is the gate charge of the FCH76N60N?

The maximum gate charge is 285 nC at Vgs=10V, with a typical value of 218 nC.

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