| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,737 pcs
|
4737 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH47N60-F133 is an N-channel power MOSFET from onsemi's SuperFET II family, designed for high-voltage switching applications. It features a drain-source voltage rating of 600V (650V at Tj=150°C) and a continuous drain current of 47A at 25°C case temperature. The device offers a low typical on-resistance of 58 mΩ (70 mΩ max) at 10V gate drive, and a typical gate charge of 210 nC, enabling efficient switching performance.
This MOSFET is avalanche-rated with a single-pulse avalanche energy of 1800 mJ and a repetitive avalanche energy of 41.7 mJ, making it robust for harsh environments. It is packaged in a TO-247-3 leaded through-hole package, suitable for high-power designs. The part is RoHS compliant and Pb-free, meeting environmental standards.
Typical applications include telecom and server power supplies, power factor correction (PFC) circuits, industrial power supplies, and ATX power supplies. The device's low gate charge and low effective output capacitance (420 pF typical) support fast switching and reduced losses in high-frequency converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.34 | $13.34 |
| 30+ | $8.11 | $8.11 |
| 60+ | $7.49 | $7.49 |
| 120+ | $6.97 | $6.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-247-3 through-hole package.
Yes, the device is RoHS3 compliant and Pb-free, as stated in the datasheet.
The continuous drain current is 47 A at a case temperature of 25°C.
The maximum drain-source on-resistance is 70 mΩ at Id=23.5A and Vgs=10V.
The typical gate charge is 210 nC at Vgs=10V.
The single-pulse avalanche energy is 1800 mJ.