| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH47N60-F085 is an N-Channel MOSFET from ON Semiconductor's SUPERFET family. It features a drain-source voltage rating of 600V and a continuous drain current of 47A at 25°C case temperature. The device offers a typical on-resistance of 64 mΩ at 10V gate drive and a typical gate charge of 187 nC.
Designed for high-efficiency power conversion, this MOSFET is suitable for automotive DC/DC converters and on-board chargers. It is qualified to AEC Q101 and PPAP capable, ensuring reliability in automotive environments. The device also features UIS (unclamped inductive switching) capability with a single pulsed avalanche energy rating of 810 mJ.
The FCH47N60-F085 is housed in a TO-247-3 package with through-hole mounting. It has a maximum power dissipation of 417W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C. The device is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 450+ | $9.84 | $9.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
47A at Tc=25°C.
64 mΩ at Vgs=10V, Id=47A.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant and Pb-Free.
TO-247-3 through-hole package.
187 nC at Vgs=10V, Id=47A.