| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,012 pcs
|
2012 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The FCH47N60 is an N-Channel MOSFET from On Semiconductor's SuperFET family. It features a drain-source voltage rating of 600V (650V at TJ=150°C) and a continuous drain current of 47A at 25°C (29.7A at 100°C). The device offers a typical on-resistance of 0.058 ohms and a maximum gate charge of 270 nC. It is designed for high-efficiency power conversion applications. The MOSFET is 100% avalanche tested with a single pulsed avalanche energy rating of 1800 mJ. It is available in a TO-247-3 through-hole package with an operating temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 450+ | $6.24 | $6.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 600V (650V at TJ=150°C).
The FCH47N60 is available in a TO-247-3 through-hole package.
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified).
Maximum gate charge is 270 nC at VGS=10V; typical is 210 nC.
Maximum on-resistance is 70 mOhm at ID=23.5A, VGS=10V; typical is 0.058 ohms.
Single pulsed avalanche energy is 1800 mJ.