FCH35N60 N-Channel MOSFET from ON Semiconductor with 600V drain-source voltage, 35A continuous drain current, and 98mOhm maximum on-resistance. Housed in a TO-247-3 through-hole package.
Mfr Part #:

FCH35N60

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from ON Semiconductor with 600V drain-source voltage, 35A continuous drain current, and 98mOhm maximum on-resistance. Housed in a TO-247-3 through-hole package.
✓ Total Stock: 2,398 pcs
$ Price Range: $75.00

FCH35N60 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,090 pcs
2090 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
156 pcs
156 pcs On Request 1 On Request On Request 11+ On Request On Request
Non-Authorised Inventory information
152 pcs
152 pcs On Request 1 On Request On Request On Request On Request On Request

FCH35N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCH35N60 Description

Short technical summary and product information.

The FCH35N60 is an N-Channel MOSFET from ON Semiconductor's SUPERFET family, utilizing charge balance technology for low on-resistance and gate charge. It features a maximum drain-source voltage of 600V and continuous drain current of 35A at 25°C case temperature. The typical on-resistance is 79mOhm, with a maximum of 98mOhm at 10V gate drive. Gate charge is typically 139nC, and input capacitance is 6640pF at 25V drain-source. The device is avalanche tested with a single pulse avalanche energy rating of 1455mJ. It is suitable for switching power applications such as PFC, server/telecom power, and solar inverters. The MOSFET is packaged in a TO-247-3 through-hole package, with a maximum power dissipation of 312.5W at 25°C case temperature. Operating temperature range is -55°C to 150°C. The device is Pb-free and RoHS compliant (unverified).

FCH35N60 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FCH35N60 - N-Channel MOSFET, 600V, 35A, TO-247-3
Subcategory: Single MOSFET

FCH35N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant
Lead Free: Yes

FCH35N60 Estimated Pricing

Qty Low High
4+ $75.00 $75.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCH35N60 Features

  • 600V drain-source voltage rating.
  • 35A continuous drain current.
  • Low typical on-resistance of 79mOhm.
  • Ultra low gate charge of 139nC.
  • 100% avalanche tested.

FCH35N60 Applications

  • Used in solar inverter applications.
  • Suitable for AC-DC power supplies.
  • Ideal for PFC circuits.
  • Used in server and telecom power supplies.
  • Applicable in FPD TV power supplies.

FCH35N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCH35N60?

600V.

What package is the FCH35N60 available in?

TO-247-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C.

Is the FCH35N60 RoHS compliant?

The device is listed as RoHS3 compliant, but this is unverified. The datasheet confirms it is Pb-free.

What is the typical on-resistance?

79mOhm typical, 98mOhm maximum at 10V gate drive.

What is the gate charge?

Typical 139nC, maximum 181nC at 10V.

What is the maximum continuous drain current?

35A at 25°C case temperature.

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