| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,090 pcs
|
2090 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
156 pcs
|
156 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
152 pcs
|
152 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FCH35N60 is an N-Channel MOSFET from ON Semiconductor's SUPERFET family, utilizing charge balance technology for low on-resistance and gate charge. It features a maximum drain-source voltage of 600V and continuous drain current of 35A at 25°C case temperature. The typical on-resistance is 79mOhm, with a maximum of 98mOhm at 10V gate drive. Gate charge is typically 139nC, and input capacitance is 6640pF at 25V drain-source. The device is avalanche tested with a single pulse avalanche energy rating of 1455mJ. It is suitable for switching power applications such as PFC, server/telecom power, and solar inverters. The MOSFET is packaged in a TO-247-3 through-hole package, with a maximum power dissipation of 312.5W at 25°C case temperature. Operating temperature range is -55°C to 150°C. The device is Pb-free and RoHS compliant (unverified).
| Qty | Low | High |
|---|---|---|
| 4+ | $75.00 | $75.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3 through-hole package.
-55°C to 150°C.
The device is listed as RoHS3 compliant, but this is unverified. The datasheet confirms it is Pb-free.
79mOhm typical, 98mOhm maximum at 10V gate drive.
Typical 139nC, maximum 181nC at 10V.
35A at 25°C case temperature.