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FCH22N60N N-Channel MOSFET rated at 600V Vdss and 22A continuous drain current. Features low on-resistance of 165mOhm and ultrafast switching performance.
Mfr Part #:

FCH22N60N

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated at 600V Vdss and 22A continuous drain current. Features low on-resistance of 165mOhm and ultrafast switching performance.
✓ Total Stock: 240 pcs

FCH22N60N Available from 1 distributor

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240 pcs
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FCH22N60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCH22N60N Description

Short technical summary and product information.

The FCH22N60N is an N-Channel MOSFET manufactured by On Semiconductor, part of the SUPREMOS super-junction technology family. It is designed for high-frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power supplies. Key electrical ratings include a maximum drain-source voltage of 600V (650V at Tj=150°C), continuous drain current of 22A at Tc=25°C (13.8A at Tc=100°C), and pulsed drain current of 66A. The device features a low typical on-resistance of 140mOhm at Vgs=10V, Id=11A, with a maximum of 165mOhm. Ultra-low gate charge of 45nC and low effective output capacitance of 196.4pF enable efficient high-speed switching. The MOSFET is 100% avalanche tested, with single pulsed avalanche energy rating of 672mJ. Packaged in a TO-247-3 through-hole case, it offers a junction-to-case thermal resistance of 0.61°C/W and operates over -55°C to 150°C junction temperature range. The device is Pb-Free and RoHS3 compliant.

FCH22N60N Quick Information

Product Type: N-Channel MOSFET
Series: SUPREMOS
Canonical Name: FCH22N60N N-Channel MOSFET
Subcategory: N-Channel

FCH22N60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCH22N60N Features

  • N-channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 22A.
  • Low typical on-resistance of 140mOhm.
  • Ultra low gate charge of 45nC.
  • 100% avalanche tested for ruggedness.

FCH22N60N Applications

  • Used in PDP TV power supplies.
  • Suitable for solar inverter designs.
  • Ideal for AC-DC power supply conversion.
  • Designed for high frequency switching applications.

FCH22N60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCH22N60N?

600V (650V at Tj=150°C).

What package is the FCH22N60N available in?

TO-247-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FCH22N60N RoHS compliant?

Yes, it is Pb-Free and RoHS3 compliant per the datasheet.

What is the typical on-resistance of the FCH22N60N?

140 mOhm at Vgs=10V, Id=11A (max 165 mOhm).

What is the gate charge of the device?

Maximum 45 nC at Vgs=10V.

Does it support avalanche operation?

Yes, single pulsed avalanche energy is 672 mJ, and repetitive avalanche energy is 2.75 mJ.

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