| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,382 pcs
|
15382 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH190N65F-F155 is an N-Channel MOSFET from On Semiconductor's SUPERFET II family, utilizing charge balance technology for low on-resistance and gate charge. It is rated for a drain-source voltage of 650V and a continuous drain current of 20.6A at 25°C.
Key electrical characteristics include a maximum on-resistance of 190mΩ at 10V gate drive, typical gate charge of 60nC, and single-pulsed avalanche energy of 400mJ. The device is designed for high-efficiency switching power applications.
The MOSFET is housed in a TO-247-3 through-hole package and supports an operating junction temperature range of -55°C to 150°C. It is Pb-free, Halide free, and RoHS compliant per the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.51 | $7.51 |
| 10+ | $5.10 | $5.10 |
| 50+ | $4.07 | $4.07 |
| 450+ | $3.28 | $3.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 650V.
The maximum continuous drain current is 20.6A at 25°C case temperature.
The maximum on-resistance is 190mΩ at Vgs=10V and Id=10A. Typical on-resistance is 168mΩ.
It comes in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The datasheet states the device is Pb-Free, Halide Free, and RoHS Compliant.