| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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445 pcs
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445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCH170N60 is a 600V N-Channel SUPERFET II MOSFET from onsemi, utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This device is designed for high-efficiency AC-DC power conversion in telecom, server, and industrial power supplies.
Key electrical specifications include a maximum drain-source voltage of 600V (650V at Tj=150°C), continuous drain current of 22A at Tc=25°C (14A at Tc=100°C), and pulsed drain current of 66A. The maximum on-resistance is 170mOhm at 11A, 10V (typical 150mOhm). Gate charge is 55nC maximum (typical 42nC), and input capacitance is 2860pF at 380V. The device is rated for single pulsed avalanche energy of 525mJ.
The FCH170N60 is housed in a TO-247-3 through-hole package with a maximum power dissipation of 227W at Tc=25°C and a junction-to-case thermal resistance of 0.55°C/W. It is RoHS3 compliant, Pb-Free, and Halide Free, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 445+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant, Pb-Free, and Halide Free.
The package is TO-247-3 with through-hole mounting.
The maximum drain-source voltage is 600V (650V at Tj=150°C).
Continuous drain current is 22A at Tc=25°C and 14A at Tc=100°C; pulsed drain current is 66A.
Maximum on-resistance is 170mOhm at 11A, 10V (typical 150mOhm).
Maximum gate charge is 55nC at 10V (typical 42nC).