DistyParts Icon
FCH165N60E FCH165N60E is a 600V, 23A N-Channel MOSFET from On Semiconductor. It features a typical Rds(on) of 132mOhm and low gate charge of 57nC.
Mfr Part #:

FCH165N60E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCH165N60E is a 600V, 23A N-Channel MOSFET from On Semiconductor. It features a typical Rds(on) of 132mOhm and low gate charge of 57nC.
✓ Total Stock: 4,950 pcs
$ Price Range: $3.18 - $7.33

FCH165N60E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
4,950 pcs
On Request
4950 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FCH165N60E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FCH165N60E Description

Short technical summary and product information.

The FCH165N60E is a 600V N-Channel MOSFET from On Semiconductor's SUPERFET II family with Easy-Drive technology. It utilizes charge balance technology for low on-resistance and gate charge, minimizing conduction and switching losses. Key specifications include a maximum drain-source voltage of 600V, continuous drain current of 23A at 25°C, and a maximum Rds(on) of 165mOhm at 10V Vgs. The device offers a typical gate charge of 57nC and low effective output capacitance of 204pF, aiding in high-efficiency switching designs. It is 100% avalanche tested with a single-pulse avalanche energy rating of 525mJ. The MOSFET is housed in a TO-247-3 through-hole package, supporting up to 227W power dissipation. Typical applications include telecom/server power supplies and industrial power supplies. The device is RoHS3 compliant and Pb-Free.

FCH165N60E Quick Information

Product Type: MOSFET
Series: Easy-Drive
Canonical Name: FCH165N60E N-Channel MOSFET
Subcategory: Single MOSFET

FCH165N60E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FCH165N60E Estimated Pricing

Qty Low High
1+ $7.33 $7.33
30+ $4.24 $4.24
60+ $3.87 $3.87
120+ $3.56 $3.56
510+ $3.18 $3.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCH165N60E Features

  • 600V drain-source voltage rating.
  • 23A continuous drain current.
  • Low Rds(on) of 132 mOhm typical.
  • Low gate charge of 57 nC typical.
  • 100% avalanche tested for reliability.

FCH165N60E Applications

  • Ideal for telecom and server power supplies.
  • Suitable for industrial power supply applications.

FCH165N60E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCH165N60E?

600V.

What is the package type of the FCH165N60E?

TO-247-3.

What is the operating temperature range of the FCH165N60E?

-55°C to 150°C.

Is the FCH165N60E RoHS compliant?

Yes, RoHS3 compliant and Pb-Free.

What is the maximum continuous drain current at 25°C?

23A.

What is the typical on-resistance of the FCH165N60E?

132 mOhm at 10V Vgs, 11.5A Id.

What is the typical gate charge of the FCH165N60E?

57 nC at 10V Vgs.

Home
Account

Categories