| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,054 pcs
|
41054 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH130N60 is an N-Channel power MOSFET from On Semiconductor's SUPERFET II family, utilizing charge balance technology for low on-resistance and fast switching. It is designed for high-voltage AC-DC power conversion applications.
Key electrical specifications: drain-source voltage 600V (650V at 150°C), continuous drain current 28A at 25°C (18A at 100°C), maximum Rds(on) of 130mΩ at 14A and 10V gate drive, and typical gate charge of 54nC. The device is avalanche rated with single-pulse energy up to 720mJ and can withstand 100V/ns MOSFET dv/dt.
Packaged in a TO-247-3 through-hole case, the FCH130N60 offers a junction-to-case thermal resistance of 0.45°C/W and maximum power dissipation of 278W at 25°C. The device is Pb-free and RoHS compliant.
Typical applications include telecom/server power supplies, industrial power supplies, and AC-DC converters where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 450+ | $1.63 | $1.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V, with a typical rating of 650V at 150°C junction temperature.
The FCH130N60 is supplied in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is Pb-free and RoHS compliant according to the datasheet.
Typical Rds(on) is 112 mΩ, with a maximum of 130 mΩ at 14A and 10V gate-source voltage.
Maximum gate charge is 70 nC at 10V, with a typical value of 54 nC.
The device can withstand 720 mJ of single-pulse avalanche energy.