| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,049 pcs
|
2049 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH110N65F from ON Semiconductor is an N-Channel MOSFET belonging to the FRFET®, SuperFET® II series. This component is designed for power switching applications, offering a high drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 35A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 110mOhm at 17.5A and 10V gate drive voltage. The gate charge (Qg) is specified at a maximum of 145nC at 10V, and the gate threshold voltage (Vgs(th)) is a maximum of 5V at 3.5mA. The maximum gate-source voltage (Vgs) is ±20V.
This MOSFET has a maximum power dissipation of 357W and operates within a temperature range of -55°C to 150°C. It is housed in a TO-247 package with through-hole mounting and long leads, making it suitable for various power circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650V.
The continuous drain current (Id) at 25°C is 35A.
The maximum on-resistance (Rds On) is 110mOhm at 17.5A and 10V.
The operating temperature range is -55°C to 150°C.
The FCH110N65F is supplied in a TO-247 package with through-hole mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.