| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH099N60E is an N-Channel power MOSFET from ON Semiconductor's SUPERFET II Easy-Drive series. It is rated for a drain-source voltage of 600V and a continuous drain current of 37A at Tc=25°C (24A at 100°C). The device utilizes charge balance technology for low on-resistance and gate charge, with typical Rds(on) of 87mΩ and maximum of 99mΩ at Vgs=10V. It features ultra-low gate charge (typical 88nC) and low effective output capacitance (typical 309pF), enabling efficient switching performance. The MOSFET is 100% avalanche tested and supports high dv/dt rates up to 100 V/ns. Typical applications include telecom/server power supplies and industrial power supplies. The part is housed in a TO-247-3 through-hole package and is supplied in tubes with a standard quantity of 30 units. It is Pb-Free and RoHS compliant.
The maximum drain-source voltage is 600 V.
It comes in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free.
The continuous drain current is 37 A at Tc=25°C and 24 A at Tc=100°C.
The maximum on-resistance is 99 mΩ at Vgs=10 V and Id=18.5 A; typical is 87 mΩ.
Maximum gate charge is 114 nC at Vgs=10 V; typical is 88 nC.