| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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342 pcs
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342 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCH085N80-F155 is an N-Channel MOSFET from On Semiconductor's SuperFET II family, utilizing charge balance technology for low on-resistance and gate charge. It features a maximum drain-source voltage of 800V and continuous drain current of 46A at 25°C. The typical on-resistance is 67 mOhm, and the typical gate charge is 196 nC, enabling efficient switching in high-voltage applications.
This device is designed for AC-DC power supplies, LED lighting, PFC circuits, server/telecom power, and industrial power applications. It offers 100% avalanche testing with a single pulse avalanche energy rating of 1701 mJ. The MOSFET is housed in a TO-247-3 through-hole package, providing a junction-to-case thermal resistance of 0.28°C/W for effective heat dissipation.
The FCH085N80-F155 is RoHS compliant and Pb-free, suitable for environmentally conscious designs. Its operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 60+ | $8.84 | $8.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V
TO-247-3 through-hole package.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant per datasheet.
196 nC at 10V.
1701 mJ single pulse.