FCH072N60 FCH072N60 is a 600V, 52A N-Channel MOSFET from On Semiconductor. It features a low on-resistance of 72mOhm and is housed in a TO-247-3 through-hole package.
Mfr Part #:

FCH072N60

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCH072N60 is a 600V, 52A N-Channel MOSFET from On Semiconductor. It features a low on-resistance of 72mOhm and is housed in a TO-247-3 through-hole package.
✓ Total Stock: 4,197 pcs
$ Price Range: $5.20 - $10.65

FCH072N60 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,142 pcs
2142 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,055 pcs
2055 pcs On Request 1 On Request On Request 24+ On Request On Request

FCH072N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCH072N60 Description

Short technical summary and product information.

The FCH072N60 is an N-Channel power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a maximum drain-to-source voltage of 600V and a continuous drain current rating of 52A at case temperature. The device features a low on-resistance of 72mOhm maximum at a gate drive of 10V and 26A drain current, enabling efficient power conversion.

 

Key electrical characteristics include a gate threshold voltage of 3.5V maximum, a total gate charge of 125nC at 10V, and an input capacitance of 5890pF at 380V drain-source voltage. These parameters support fast switching and reduced switching losses in power circuits. The maximum power dissipation is 481W at case temperature.

 

The MOSFET is packaged in a TO-247-3 through-hole package, which provides excellent thermal performance and mechanical robustness for high-power designs. The operating junction temperature range is -55°C to 150°C. The device is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).

FCH072N60 Quick Information

Product Type: MOSFET
Canonical Name: FCH072N60 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FCH072N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCH072N60 Estimated Pricing

Qty Low High
1+ $10.65 $10.65
30+ $6.35 $6.35
60+ $5.84 $5.84
120+ $5.41 $5.41
510+ $5.20 $5.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCH072N60 Features

  • 600V drain-source voltage rating.
  • 52A continuous drain current capability.
  • Low 72mOhm on-resistance at 10V.
  • TO-247-3 through-hole package.
  • 125nC gate charge for fast switching.

FCH072N60 Applications

  • Used in high-voltage power supplies.
  • Suitable for motor control circuits.
  • Ideal for DC-DC converters.
  • Applied in inverter systems.

FCH072N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCH072N60?

The maximum drain-source voltage (Vdss) is 600V.

What package is the FCH072N60 available in?

The FCH072N60 is available in a TO-247-3 through-hole package.

What is the operating temperature range of the FCH072N60?

The operating junction temperature range is -55°C to 150°C.

Is the FCH072N60 RoHS compliant?

The FCH072N60 is listed as RoHS3 Compliant, but this status is unverified.

What is the maximum drain current of the FCH072N60?

The maximum continuous drain current is 52A at case temperature.

What is the on-resistance of the FCH072N60?

The maximum on-resistance is 72mOhm at 26A drain current and 10V gate drive.

What is the gate charge of the FCH072N60?

The maximum total gate charge is 125nC at 10V gate-source voltage.

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