FCH070N60E N-Channel MOSFET rated for 600V drain-source voltage and 52A continuous current. Features low on-resistance of 70mOhm and is housed in a TO-247-3 through-hole package.
Mfr Part #:

FCH070N60E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 600V drain-source voltage and 52A continuous current. Features low on-resistance of 70mOhm and is housed in a TO-247-3 through-hole package.
✓ Total Stock: 600 pcs
$ Price Range: $4.26 - $9.15

FCH070N60E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
600 pcs
600 pcs On Request 1 On Request On Request On Request On Request On Request

FCH070N60E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCH070N60E Description

Short technical summary and product information.

The FCH070N60E is an N-Channel MOSFET from On Semiconductor's SUPERFET II Easy-Drive series. It is designed for high-voltage power switching applications such as telecom and industrial power supplies. The device features a drain-source voltage rating of 600V and a continuous drain current of 52A at 25°C. The maximum on-resistance is 70mOhm at 10V gate drive, with a typical value of 58mOhm. Gate charge is 166nC maximum, and input capacitance is 4925pF. The MOSFET is 100% avalanche tested with a single pulse avalanche energy rating of 1128mJ. It is housed in a TO-247-3 through-hole package and is Pb-free and RoHS compliant. The operating junction temperature range is -55°C to 150°C. This device is suitable for applications requiring high efficiency and reliability in power conversion.

FCH070N60E Quick Information

Product Type: MOSFET - Single
Series: Easy-Drive
Canonical Name: FCH070N60E N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FCH070N60E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FCH070N60E Estimated Pricing

Qty Low High
1+ $9.15 $9.15
30+ $5.39 $5.39
60+ $4.94 $4.94
120+ $4.56 $4.56
510+ $4.26 $4.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCH070N60E Features

  • 600V drain-source voltage rating.
  • 52A continuous drain current at 25°C.
  • Low on-resistance of 70mOhm maximum.
  • 100% avalanche tested for reliability.
  • TO-247-3 through-hole package.

FCH070N60E Applications

  • Used in telecom and server power supplies.
  • Ideal for industrial power supply designs.
  • Suitable for high-voltage power conversion.

FCH070N60E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the FCH070N60E?

The maximum drain-to-source voltage (Vdss) is 600V.

What package does the FCH070N60E come in?

It is housed in a TO-247-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FCH070N60E RoHS compliant?

Yes, the device is RoHS3 compliant and Pb-free as stated in the datasheet.

What is the maximum drain current?

The continuous drain current is 52A at Tc=25°C and 33A at Tc=100°C.

What is the on-resistance of the FCH070N60E?

Maximum on-resistance is 70mOhm at Id=26A, Vgs=10V; typical is 58mOhm.

What is the avalanche energy rating?

Single pulsed avalanche energy is 1128mJ at IAS=9.5A, RG=25Ohm, starting TJ=25°C.

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