| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH070N60E is an N-Channel MOSFET from On Semiconductor's SUPERFET II Easy-Drive series. It is designed for high-voltage power switching applications such as telecom and industrial power supplies. The device features a drain-source voltage rating of 600V and a continuous drain current of 52A at 25°C. The maximum on-resistance is 70mOhm at 10V gate drive, with a typical value of 58mOhm. Gate charge is 166nC maximum, and input capacitance is 4925pF. The MOSFET is 100% avalanche tested with a single pulse avalanche energy rating of 1128mJ. It is housed in a TO-247-3 through-hole package and is Pb-free and RoHS compliant. The operating junction temperature range is -55°C to 150°C. This device is suitable for applications requiring high efficiency and reliability in power conversion.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.15 | $9.15 |
| 30+ | $5.39 | $5.39 |
| 60+ | $4.94 | $4.94 |
| 120+ | $4.56 | $4.56 |
| 510+ | $4.26 | $4.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
It is housed in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and Pb-free as stated in the datasheet.
The continuous drain current is 52A at Tc=25°C and 33A at Tc=100°C.
Maximum on-resistance is 70mOhm at Id=26A, Vgs=10V; typical is 58mOhm.
Single pulsed avalanche energy is 1128mJ at IAS=9.5A, RG=25Ohm, starting TJ=25°C.