| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,250 pcs
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2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCH060N80-F155 is an N-Channel MOSFET from On Semiconductor, part of the SUPERFET II family. It utilizes charge balance technology to achieve low on-resistance and gate charge, making it suitable for high-efficiency switching power applications.
This MOSFET is rated for a drain-source voltage of 800V and a continuous drain current of 58A at 25°C (36.8A at 100°C). The typical on-resistance is 54 mOhm, with a maximum of 60 mOhm at 29A and 10V gate drive. It features a low gate charge of 270 nC typical and an input capacitance of 14685 pF, enabling fast switching.
The device is avalanche tested, with a single pulse avalanche energy rating of 2317 mJ. It can dissipate up to 500W of power at 25°C case temperature. The operating junction temperature range is -55°C to 150°C, with a thermal resistance of 0.25°C/W from junction to case.
The FCH060N80-F155 is supplied in a TO-247-3 through-hole package, suitable for mounting on heatsinks. It is RoHS compliant. Typical applications include AC-DC power supplies, PFC circuits, and industrial power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $19.18 | $19.18 |
| 10+ | $13.70 | $13.70 |
| 120+ | $10.70 | $10.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
It is available in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant as per the datasheet.
36.8A at 100°C case temperature.
Typical gate charge is 270 nC at 10V gate drive.
2317 mJ at specified conditions.