| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,063 pcs
|
5063 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH043N60 is an N-Channel MOSFET from On Semiconductor's SUPERFET II family, utilizing charge balance technology for low on-resistance and gate charge. It features a maximum drain-source voltage of 600V and continuous drain current of 75A at 25°C. The typical on-resistance is 37mOhm with a maximum of 43mOhm at 10V gate drive. Gate charge is typically 163nC and maximum 215nC at 10V. Input capacitance is 12225pF at 400V drain-source. The device is 100% avalanche tested with a single pulse avalanche energy rating of 2025mJ. It is housed in a TO-247-3 through-hole package and is Pb-Free and RoHS compliant. Designed for AC/DC power conversion applications including telecom and industrial power supplies.
| Qty | Low | High |
|---|---|---|
| 450+ | $7.09 | $7.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
75A at case temperature 25°C.
Maximum 43mOhm at 38A drain current and 10V gate-source voltage; typical 37mOhm.
TO-247-3 through-hole package.
The datasheet states the device is Pb-Free and RoHS compliant.
-55°C to 150°C junction temperature.
592W at case temperature 25°C.