FCH041N65EF-F155 N-Channel MOSFET from On Semiconductor with 650V drain-to-source voltage, 76A continuous drain current, and 41 mOhm maximum on-resistance in a TO-247-3 through-hole package.
Mfr Part #:

FCH041N65EF-F155

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 650V drain-to-source voltage, 76A continuous drain current, and 41 mOhm maximum on-resistance in a TO-247-3 through-hole package.
✓ Total Stock: 1,710 pcs
$ Price Range: $10.36 - $16.05

FCH041N65EF-F155 Available from 1 distributor

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✓ Non-Authorised
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1,710 pcs
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FCH041N65EF-F155 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCH041N65EF-F155 Description

Short technical summary and product information.

The FCH041N65EF-F155 is an N-Channel power MOSFET from On Semiconductor's SUPERFET II family. It utilizes charge balance technology to achieve a low typical on-resistance of 36 mOhm and a maximum of 41 mOhm at 10V gate drive. The device is rated for a drain-to-source voltage of 650V and can handle a continuous drain current of 76A at case temperature 25°C and 48.1A at 100°C. The typical gate charge is 229 nC.

 

This MOSFET is designed for high-efficiency switching power applications. Its avalanche energy rating is 2025 mJ single pulsed, and the diode is characterized with a peak recovery dv/dt of 50 V/ns. The device is housed in a TO-247-3 package with long leads and is intended for through-hole mounting. It is specified for an operating junction temperature range of -55°C to 150°C with a maximum power dissipation of 595W.

 

Applications include LCD/LED/PDP TV power supplies, telecom and server power supplies, solar inverters, and AC-DC power converters. The part is Pb-Free and RoHS3 Compliant per the datasheet.

FCH041N65EF-F155 Quick Information

Product Type: Single MOSFET
Series: FCH041N65EF
Canonical Name: FCH041N65EF-F155 N-Channel SUPERFET II MOSFET
Subcategory: N-Channel, Super-Junction

FCH041N65EF-F155 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FCH041N65EF-F155 Estimated Pricing

Qty Low High
1+ $16.05 $16.05
10+ $11.35 $11.35
120+ $10.36 $10.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCH041N65EF-F155 Features

  • 650V drain-to-source voltage rating.
  • 76A continuous drain current at 25°C.
  • 41 mOhm maximum on-resistance at 10V.
  • Through-hole TO-247-3 package with long leads.
  • Pb-Free and RoHS3 compliant.

FCH041N65EF-F155 Applications

  • Used in telecom and server power supplies.
  • Ideal for solar inverter DC-AC stages.
  • Suitable for AC-DC power converters.
  • Applied in LCD/LED and PDP TV power.
  • Works in power factor correction circuits.

FCH041N65EF-F155 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FCH041N65EF-F155?

The maximum drain-to-source voltage (Vdss) is 650 V.

What is the maximum continuous drain current?

At case temperature 25°C, the continuous drain current is 76 A; at 100°C, it is 48.1 A.

What is the on-resistance of this MOSFET?

The maximum Rds(on) is 41 mOhm at Vgs=10V and Id=38A; typical Rds(on) is 36 mOhm.

What package does the FCH041N65EF-F155 come in?

It is in a TO-247-3 through-hole package with long leads.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FCH041N65EF-F155 RoHS compliant?

Yes, the device is Pb-Free and RoHS3 Compliant per the datasheet.

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