| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
405 pcs
|
405 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH041N60F-F085 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of the SUPERFET II FRFET family. This device is designed for applications requiring high efficiency and fast switching, such as automotive onboard chargers and DC/DC converters. It features a drain-to-source voltage rating of 600V and a continuous drain current of 76A at 25°C case temperature.
Key electrical parameters include a maximum on-resistance of 41mΩ (typical 36mΩ) at Vgs=10V and Id=38A, and a total gate charge of 347nC (max) at Vgs=10V. The device is avalanche-rated with a single pulse avalanche energy of 2025mJ. It also offers high dv/dt capability of 100V/ns for the MOSFET and 50V/ns for peak diode recovery.
The MOSFET is housed in a standard TO-247-3 through-hole package, suitable for high-power applications requiring efficient heat dissipation. The operating junction temperature range is -55°C to 150°C. The device is qualified to AEC Q101 and PPAP capable, making it suitable for automotive applications.
| Qty | Low | High |
|---|---|---|
| 100+ | $7.87 | $7.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The MOSFET is available in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant and Pb-free as per the datasheet.
The maximum on-resistance is 41mΩ at Vgs=10V and Id=38A.
The typical total gate charge is 267nC at Vgs=10V, with a maximum of 347nC.
It is suitable for automotive onboard chargers, DC/DC converters in HEVs, and high-voltage power supplies.