FCH041N60E N-Channel MOSFET with 600V drain-source voltage and 77A continuous drain current. Ultra-low on-resistance of 41mΩ at 39A, 10V.
Mfr Part #:

FCH041N60E

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 77A continuous drain current. Ultra-low on-resistance of 41mΩ at 39A, 10V.
✓ Total Stock: 108,721 pcs
$ Price Range: $7.83 - $15.04

FCH041N60E Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FCH041N60E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCH041N60E Description

Short technical summary and product information.

The FCH041N60E is an N-Channel enhancement-mode MOSFET designed for high-efficiency power conversion applications. It features a 600V drain-source voltage rating and a continuous drain current of 77A at Tc. The device offers an ultra-low on-resistance of 41mΩ (max) at 39A and 10V gate drive, enabling high current handling with minimal conduction losses. The gate charge is 380nC (max) at 10V, and input capacitance is 13700pF at 100V. The MOSFET is housed in a through-hole TO-247-3 package, suitable for high-power designs. Operating temperature range is -55°C to 150°C (junction). Maximum power dissipation is 592W at Tc.

FCH041N60E Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FCH041N60E N-Channel MOSFET
Subcategory: Single MOSFET

FCH041N60E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCH041N60E Estimated Pricing

Qty Low High
1+ $15.04 $15.04
10+ $9.22 $9.22
120+ $7.93 $7.93
510+ $7.83 $7.83

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCH041N60E Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current of 77A at Tc.
  • Ultra-low on-resistance of 41mΩ at 39A.
  • Housed in through-hole TO-247-3 package.
  • Operating temperature range from -55°C to 150°C.

FCH041N60E Applications

  • Used in high-efficiency power supply circuits.
  • Ideal for motor control and inverter applications.
  • Suitable for DC-DC converters and PFC stages.
  • Common in industrial and automotive power systems.

FCH041N60E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCH041N60E?

600V.

What is the maximum drain current?

77A at Tc.

What is the on-resistance?

41mΩ max at 39A, 10V.

What is the package type?

TO-247-3 through-hole.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the device RoHS compliant?

RoHS3 compliant (unverified).

What is the gate charge?

380nC max at 10V.

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