FCH023N65S3-F155 N-Channel MOSFET, 650V drain-source voltage, 75A continuous drain current, 23mOhm Rds(on) in TO-247-3 package from onsemi's SUPERFET III series.
Mfr Part #:

FCH023N65S3-F155

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 650V drain-source voltage, 75A continuous drain current, 23mOhm Rds(on) in TO-247-3 package from onsemi's SUPERFET III series.
✓ Total Stock: 3,934 pcs
$ Price Range: $8.08 - $14.85

FCH023N65S3-F155 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,370 pcs
2370 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,540 pcs
1540 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
24 pcs
24 pcs On Request 1 On Request On Request On Request On Request On Request

FCH023N65S3-F155 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FCH023N65S3-F155 Description

Short technical summary and product information.

The FCH023N65S3-F155 is a high-voltage N-Channel power MOSFET from onsemi's SUPERFET III series, designed for efficient power conversion in demanding applications. It features a maximum drain-source voltage of 650V (700V at Tj=150°C) and a continuous drain current of 75A at 25°C, enabling high-power handling. The device offers ultra-low on-resistance with a typical Rds(on) of 19.5 mOhm and a maximum of 23 mOhm at 10V gate drive, minimizing conduction losses. Its low gate charge (222 nC) and low effective output capacitance (1980 pF) enhance switching performance, making it suitable for high-frequency topologies. The MOSFET is 100% avalanche tested with a single pulse avalanche energy rating of 2025 mJ, ensuring robustness in rugged environments. Packaged in a TO-247-3 through-hole case with long leads, it supports easy mounting and thermal management. Typical applications include telecom and server power supplies, industrial power systems, UPS, and solar inverters.

FCH023N65S3-F155 Quick Information

Product Type: MOSFET
Series: SUPERFET III
Canonical Name: FCH023N65S3-F155
Subcategory: N-Channel Power MOSFET

FCH023N65S3-F155 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCH023N65S3-F155 Estimated Pricing

Qty Low High
1+ $14.85 $14.85
10+ $9.17 $9.17
120+ $8.16 $8.16
510+ $8.08 $8.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCH023N65S3-F155 Features

  • 650V drain-source voltage rating.
  • 75A continuous drain current at 25°C.
  • Ultra low Rds(on) of 23 mOhm typical.
  • Low gate charge of 222 nC.
  • 100% avalanche tested.

FCH023N65S3-F155 Applications

  • Used in telecom/server power supplies.
  • Ideal for industrial power supplies.
  • Suitable for UPS and solar inverters.

FCH023N65S3-F155 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

Maximum drain-source voltage (Vdss) is 650V, and 700V at Tj=150°C.

What is the package type?

It comes in a TO-247-3 through-hole package with long leads.

What is the operating temperature range?

Junction temperature range is -55°C to +150°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free, verified by datasheet.

What is the typical on-resistance?

Typical Rds(on) is 19.5 mOhm, maximum 23 mOhm at 37.5A, 10V.

What is the total gate charge?

Maximum gate charge is 222 nC at Vgs=10V.

What is the single pulse avalanche energy rating?

Maximum single pulse avalanche energy (EAS) is 2025 mJ at Ias=15A, starting Tj=25°C.

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