| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The FCH023N65S3 is an N-Channel MOSFET from ON Semiconductor, part of the SUPERFET III family utilizing charge balance technology. This device is designed for high voltage applications, offering excellent low on-resistance and gate charge performance.
Key electrical specifications include a drain-to-source voltage of 650V, a continuous drain current of 75A at 25°C, and a maximum on-resistance of 23 mΩ at 10V gate-source voltage. It features a typical gate charge of 222 nC and an effective output capacitance of 1980 pF.
The MOSFET is rated for a wide operating temperature range of -55°C to +150°C and has a maximum power dissipation of 595W at 25°C. It is 100% avalanche tested, ensuring reliability.
Packaged in a TO-247 long leads package, this component is suitable for through-hole mounting. It is RoHS3 compliant and Pb-Free. Applications include Telecom/Server Power Supplies, Industrial Power Supplies, and UPS/Solar systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650 V.
The continuous drain current is 75 A at 25°C.
The maximum on-resistance is 23 mΩ.
The typical gate charge is 222 nC.
The operating and storage temperature range is -55°C to +150°C.
The FCH023N65S3 is supplied in a TO-247 Long Leads package.
Yes, the FCH023N65S3 is RoHS3 Compliant.