DistyParts Icon
FCD9N60NTM FCD9N60NTM is an N-Channel MOSFET from On Semiconductor with 600V drain-source voltage and 9A continuous drain current.
Mfr Part #:

FCD9N60NTM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCD9N60NTM is an N-Channel MOSFET from On Semiconductor with 600V drain-source voltage and 9A continuous drain current.
✓ Total Stock: 24 pcs
$ Price Range: $0.97 - $1.98

FCD9N60NTM Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
21 pcs
On Request
21 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
3 pcs
On Request
3 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FCD9N60NTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FCD9N60NTM Description

Short technical summary and product information.

The FCD9N60NTM is an N-Channel enhancement mode MOSFET manufactured by On Semiconductor. It is designed for high voltage switching applications. The device features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) rating of 9A. The maximum drain-source on-resistance (Rds(on)) is 385mOhm at Vgs = 10V and Id = 4.5A. The gate threshold voltage (Vgs(th)) is a maximum of 5V at Id = 250µA. The device is capable of handling a maximum power dissipation of 92.6W. It is housed in a DPAK (TO-252) surface mount package, which is suitable for automated assembly processes. The operating junction temperature range is -55°C to +150°C.

FCD9N60NTM Quick Information

Product Type: MOSFET
Canonical Name: FCD9N60NTM N-Channel MOSFET 600V 9A DPAK
Subcategory: Single MOSFET

FCD9N60NTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCD9N60NTM Estimated Pricing

Qty Low High
1+ $1.98 $1.98
10+ $1.77 $1.77
100+ $1.42 $1.42
500+ $1.18 $1.18
1,000+ $0.97 $0.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCD9N60NTM Features

  • 600V maximum drain-source voltage.
  • 9A continuous drain current rating.
  • 385mOhm maximum on-resistance.
  • Surface mount DPAK (TO-252) package.
  • -55°C to +150°C operating temperature range.

FCD9N60NTM Applications

  • Used in high voltage DC-DC converters.
  • Suitable for AC-DC power supplies.
  • Ideal for motor control circuits.
  • Applied in LED lighting drivers.

FCD9N60NTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCD9N60NTM?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current (Id) is 9A.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance (Rds(on)) is 385mOhm at Vgs=10V and Id=4.5A.

What package does the FCD9N60NTM come in?

It comes in a DPAK (TO-252) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 5V at Id=250µA.

What is the maximum power dissipation?

The maximum power dissipation is 92.6W.

Home
Account

Categories