FCD900N60Z N-Channel MOSFET with 600V drain-source voltage and 4.5A continuous drain current. Designed for surface mount applications in TO-252 package.
Mfr Part #:

FCD900N60Z

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 4.5A continuous drain current. Designed for surface mount applications in TO-252 package.
✓ Total Stock: 19,278 pcs
$ Price Range: $1.85 - $2.88

FCD900N60Z Available from 1 distributor

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✓ Non-Authorised
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FCD900N60Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCD900N60Z Description

Short technical summary and product information.

The FCD900N60Z is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 4.5A at Tc. The on-resistance (Rds(on)) is a maximum of 900mOhm at a gate drive of 10V and 2.3A drain current. The device requires a gate drive voltage of 10V for optimal performance.

 

Electrical characteristics include a total gate charge of 17nC and an input capacitance of 720pF, facilitating efficient switching. The gate threshold voltage is 3.5V, and the maximum gate-source voltage is ±20V. Power dissipation is rated at 52W at Tc. The operating junction temperature range spans from -55°C to 150°C.

 

The MOSFET is housed in a surface-mount TO-252-3 package (also known as DPak or SC-63), with a supplier device package of TO-252AA. The device is listed as RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (Unlimited).

FCD900N60Z Quick Information

Product Type: MOSFET - Single
Series: SuperFET II
Canonical Name: FCD900N60Z N-Channel MOSFET, 600V, 4.5A, TO-252
Subcategory: N-Channel

FCD900N60Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCD900N60Z Estimated Pricing

Qty Low High
1+ $2.88 $2.88
10+ $1.85 $1.85
2,500+ $1.85 $1.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCD900N60Z Features

  • N-Channel MOSFET for high-voltage switching.
  • Rated for 600V drain-source voltage.
  • Continuous drain current of 4.5A.
  • Low on-resistance of 900mOhm.
  • Surface mount TO-252 package.

FCD900N60Z Applications

  • Ideal for power supply circuits.
  • Used in DC-DC converter applications.
  • Suitable for motor control systems.
  • Can be used in LED lighting drivers.

FCD900N60Z FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of FCD900N60Z?

The maximum drain-source voltage (Vdss) is 600V.

What package does FCD900N60Z come in?

It comes in a surface mount TO-252-3 package (DPak, SC-63) with supplier device package TO-252AA.

What is the operating temperature range of FCD900N60Z?

The operating junction temperature range is -55°C to 150°C.

Is FCD900N60Z RoHS compliant?

It is listed as RoHS3 compliant, though this status is unverified.

What is the maximum continuous drain current of FCD900N60Z?

The maximum continuous drain current is 4.5A at Tc.

What is the gate threshold voltage of FCD900N60Z?

The maximum gate threshold voltage is 3.5V at 250µA drain current.

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