| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCD850N80Z is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring efficient power management.
Key electrical specifications include a drain-to-source voltage (Vdss) of 800V and a continuous drain current of 6A at case temperature. The device features a maximum on-resistance (Rds(on)) of 850mOhm at a gate-source voltage of 10V and a drain current of 3A. The gate charge is 29 nC maximum at 10V, and the input capacitance is 1315 pF maximum at 100V drain-source voltage.
The FCD850N80Z is offered in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA. It supports a maximum power dissipation of 75W at case temperature and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.68 | $3.68 |
| 10+ | $2.23 | $2.23 |
| 100+ | $1.69 | $1.69 |
| 500+ | $1.38 | $1.38 |
| 1,000+ | $1.37 | $1.37 |
| 2,500+ | $1.11 | $1.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 800V.
The maximum continuous drain current is 6A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 850mOhm at Vgs=10V and Id=3A.
It comes in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge (Qg) is 29 nC at Vgs=10V.
The maximum input capacitance (Ciss) is 1315 pF at Vds=100V.