Mfr Part #:

FCD7N60TM-WS

Mfr Name: N-A

The ON Semiconductor FCD7N60TM-WS is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-source voltage and 7A continuous drain current.

✓ Total Stock: 1,300 pcs

$ Price Range: $0.71

FCD7N60TM-WS Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
ACK ELEKTRONIK ✓ Non-Authorised Inventory information	1,300 pcs On Request	1300 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FCD7N60TM-WS Specifications Quick View

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FCD7N60TM-WS Description

Short technical summary and product information.

The FCD7N60TM-WS from ON Semiconductor is an N-Channel MOSFET belonging to the FCD7N60 series. This component is designed for various power applications, offering a robust set of electrical characteristics.

Key electrical specifications include a continuous drain current (Id) of 7A and a drain-source voltage (Vds) of 600V. The on-resistance (Rds On) is rated at 530 mOhms, indicating efficient power handling. The gate-source voltage (Vgs) is 30V, and the device operates with an enhancement mode channel.

Thermal considerations include a maximum operating temperature of +150 C and a minimum operating temperature of -55 C, with a power dissipation (Pd) of 83W. Switching characteristics are detailed with a typical turn-on delay time of 35 ns and a typical turn-off delay time of 75 ns, complemented by rise and fall times of 55 ns and 32 ns, respectively.

Packaged in a TO-252-3 surface-mount (SMD/SMT) configuration, the FCD7N60TM-WS is supplied on tape and reel. This MOSFET utilizes Silicon (Si) technology and is suitable for designs requiring reliable N-channel switching capabilities.

FCD7N60TM-WS Quick Information

Product Type: MOSFET

Series: FCD7N60

Canonical Name: FCD7N60TM-WS N-Channel MOSFET

Subcategory: N-Channel MOSFET

FCD7N60TM-WS Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FCD7N60TM-WS Estimated Pricing

Qty	Low	High
1+	$0.71	$0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCD7N60TM-WS Features

N-Channel MOSFET with 600V drain-source voltage.
Continuous drain current of 7A.
Low on-resistance of 530 mOhms.
SMD/SMT package in TO-252-3.
Wide operating temperature range.

FCD7N60TM-WS Applications

Suitable for power switching applications.
Used in discrete semiconductor circuits.
Ideal for designs requiring N-channel FETs.
Surface-mount assembly compatible.

FCD7N60TM-WS FAQs

7 frequently asked questions generated from this part’s specifications.

What is the continuous drain current for the FCD7N60TM-WS?

The continuous drain current is 7A.

What is the drain-source voltage rating of the FCD7N60TM-WS MOSFET?

The drain-source voltage is 600V.

What is the Rds On for the FCD7N60TM-WS?

The drain-source on-resistance is 530 mOhms.

What is the package type for the FCD7N60TM-WS?

The package is TO-252-3 with SMD/SMT mounting style.

What is the operating temperature range for this MOSFET?

The operating temperature range is from -55 C to +150 C.

What is the RoHS status of the FCD7N60TM-WS?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the FCD7N60TM-WS?

The Moisture Sensitivity Level is 1 Unlimited.