FCD7N60TM-WS N-Channel MOSFET rated for 600V drain-source voltage and 7A continuous drain current. Features 600mOhm on-resistance and 30nC gate charge.
Mfr Part #:

FCD7N60TM-WS

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 600V drain-source voltage and 7A continuous drain current. Features 600mOhm on-resistance and 30nC gate charge.
✓ Total Stock: 10,102 pcs
$ Price Range: $2.02 - $3.29

FCD7N60TM-WS Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
102 pcs
102 pcs On Request 1 On Request On Request On Request On Request On Request

FCD7N60TM-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCD7N60TM-WS Description

Short technical summary and product information.

The FCD7N60TM-WS is an N-Channel MOSFET from ON Semiconductor designed for high-voltage switching applications. It features a drain-source breakdown voltage of 600V and a continuous drain current of 7A at 25°C case temperature. The device offers a maximum on-resistance of 600mOhm at 10V gate drive and 3.5A drain current, with a total gate charge of 30nC. Input capacitance is 920pF at 25V drain-source voltage. The MOSFET is housed in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 83W at 25°C case temperature. The gate threshold voltage is 5V maximum at 250µA drain current, and the maximum gate-source voltage is ±30V. This component is suitable for power management circuits, DC-DC converters, and motor control applications where high efficiency and compact design are required.

FCD7N60TM-WS Quick Information

Product Type: MOSFET
Series: SuperFET
Canonical Name: FCD7N60TM-WS N-Channel MOSFET
Subcategory: N-Channel MOSFET

FCD7N60TM-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCD7N60TM-WS Estimated Pricing

Qty Low High
1+ $3.29 $3.29
10+ $2.02 $2.02
2,500+ $2.02 $2.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCD7N60TM-WS Features

  • 600V drain-source breakdown voltage.
  • 7A continuous drain current rating.
  • 600mOhm maximum on-resistance.
  • Surface-mount DPAK package.
  • RoHS3 compliant design.

FCD7N60TM-WS Applications

  • Used in high-voltage DC-DC converters.
  • Ideal for power factor correction circuits.
  • Suitable for motor drive applications.
  • Applied in switching power supplies.

FCD7N60TM-WS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

600V.

What package is this MOSFET available in?

TO-252-3 (DPak) surface-mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is this component RoHS compliant?

Yes, RoHS3 compliant per database.

What is the maximum drain current?

7A at 25°C case temperature.

What is the on-resistance?

600mOhm maximum at 3.5A and 10V gate drive.

What is the gate charge?

30nC maximum at 10V gate-source voltage.

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