| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCD620N60ZF is an N-Channel enhancement-mode MOSFET from ON Semiconductor. It is designed for high-voltage switching applications with a maximum drain-source voltage of 600V and continuous drain current of 7.3A. The device features a low maximum on-resistance of 620mOhm at Vgs=10V, ensuring efficient power conversion. The gate threshold voltage is typically 5V at 250µA, and the gate charge is 36nC, enabling fast switching. The MOSFET is housed in a surface-mount TO-252-3 (DPak) package, which is suitable for automated assembly. With an operating junction temperature range of -55°C to 150°C, it can withstand harsh environments. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). Typical applications include switch-mode power supplies, power factor correction, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.17 | $3.17 |
| 10+ | $2.04 | $2.04 |
| 100+ | $1.40 | $1.40 |
| 500+ | $1.14 | $1.14 |
| 1,000+ | $1.06 | $1.06 |
| 2,500+ | $1.02 | $1.02 |
| 5,000+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package is TO-252 (D-Pak).
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
7.3 A at case temperature Tc.
5 V maximum at Id = 250 µA.
620 mOhm at Id = 3.6 A, Vgs = 10 V.