| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,778 pcs
|
5778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
174 pcs
|
174 pcs | On Request | 1 | On Request | On Request | 2014+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCD600N60Z is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications and features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7.4A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 600mOhm at a gate drive of 10V and drain current of 3.7A, a typical gate charge (Qg) of 26nC at Vgs=10V, and an input capacitance (Ciss) of 1120pF at Vds=25V. The device is capable of dissipating up to 89W of power at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with a supplier device package designation of TO-252AA. It is suitable for automated assembly processes and is commonly used in power management circuits, switch-mode power supplies, and motor control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
| 10+ | $1.84 | $1.84 |
| 100+ | $1.36 | $1.36 |
| 500+ | $1.10 | $1.10 |
| 1,000+ | $1.05 | $1.05 |
| 2,500+ | $0.86 | $0.86 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current (Id) is 7.4A at a case temperature of 25°C.
The maximum on-resistance (Rds(on)) is 600mOhm at a drain current of 3.7A and gate-source voltage of 10V.
The FCD600N60Z is available in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with a supplier device package of TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge (Qg) is 26nC at a gate-source voltage of 10V.
The maximum input capacitance (Ciss) is 1120pF at a drain-source voltage of 25V.