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FCD4N60TM N-Channel MOSFET with 600V drain-source voltage and 3.9A continuous drain current. Features low on-resistance of 1.2 Ohm at 10V gate drive.
Mfr Part #:

FCD4N60TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 3.9A continuous drain current. Features low on-resistance of 1.2 Ohm at 10V gate drive.
✓ Total Stock: 12,500 pcs
$ Price Range: $0.83 - $2.71

FCD4N60TM Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
12,500 pcs
On Request
12500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FCD4N60TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCD4N60TM Description

Short technical summary and product information.

The FCD4N60TM is an N-Channel MOSFET from ON Semiconductor designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 3.9A. The maximum on-resistance is 1.2 Ohm at a gate drive of 10V and drain current of 2A, enabling efficient power conversion.

 

The device has a gate threshold voltage of 5V maximum at 250µA and a total gate charge of 16.6 nC at 10V, which supports fast switching. Input capacitance is 540 pF at 25V. The MOSFET can dissipate up to 50W of power and operates over a junction temperature range of -55°C to 150°C.

 

Packaged in a TO-252-3 (DPak) surface-mount package, the FCD4N60TM is suitable for automated assembly. Typical applications include switching power supplies, DC-DC converters, motor control circuits, and high-voltage inverters.

FCD4N60TM Quick Information

Product Type: N-Channel MOSFET
Series: SuperFET
Canonical Name: FCD4N60TM N-Channel MOSFET, 600V, 3.9A, TO-252
Subcategory: Single N-Channel MOSFET

FCD4N60TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCD4N60TM Estimated Pricing

Qty Low High
1+ $2.71 $2.71
10+ $1.75 $1.75
100+ $1.20 $1.20
500+ $0.96 $0.96
1,000+ $0.89 $0.89
2,500+ $0.83 $0.83

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCD4N60TM Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 3.9A.
  • Low on-resistance of 1.2 Ohm typical.
  • Surface mount TO-252 (DPak) package.
  • Wide operating temperature range -55°C to 150°C.

FCD4N60TM Applications

  • Used in switching power supply circuits.
  • Ideal for DC-DC converter designs.
  • Suitable for motor control applications.
  • Applicable in high-voltage inverters.
  • Used in power management systems.

FCD4N60TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCD4N60TM?

600V.

What package is the FCD4N60TM available in?

TO-252-3 (DPak).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FCD4N60TM RoHS compliant?

Yes, RoHS3 compliant.

What is the typical gate charge of this MOSFET?

16.6 nC at 10V.

What is the maximum on-resistance?

1.2 Ohm at 2A, 10V.

What is the gate threshold voltage?

5V max at 250µA.

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