| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,101 pcs
|
3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
978 pcs
|
978 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCD360N65S3R0 is a high-voltage N-Channel power MOSFET from onsemi's SUPERFET III Easy Drive series. It features a 650V drain-source voltage (700V at 150°C junction temperature) and 10A continuous drain current. The device has a typical on-resistance of 310mOhm and maximum 360mOhm at 10V gate drive. It is 100% avalanche tested with single pulse avalanche energy rating of 40mJ. The MOSFET is designed for computing, telecom, server, and industrial power supplies, as well as lighting and charger applications. It is housed in a D-PAK (TO-252) surface mount package and is RoHS compliant. The SUPERFET III technology provides low gate charge (18nC) and low effective output capacitance (173pF) for efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.35 | $3.35 |
| 10+ | $2.18 | $2.18 |
| 100+ | $1.51 | $1.51 |
| 500+ | $1.23 | $1.23 |
| 1,000+ | $1.19 | $1.19 |
| 2,500+ | $1.18 | $1.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V at 25°C, and 700V at 150°C junction temperature.
The device is available in a D-PAK (TO-252) surface mount package.
The junction temperature range is -55°C to +150°C.
Yes, the device is RoHS compliant as stated in the datasheet.
The continuous drain current is 10A at 25°C case temperature, and 6A at 100°C.
The maximum gate threshold voltage is 4.5V at 1mA drain current.
The typical total gate charge is 18 nC at 10V gate voltage.