| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,962 pcs
|
4962 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCD3400N80Z is an N-Channel MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a drain-to-source voltage of 800V and a continuous drain current of 2A at 25°C. The device has a maximum on-resistance of 3.4 Ohm at 1A and 10V gate drive. Gate threshold voltage is 4.5V maximum. Gate charge is 9.6 nC at 10V, and input capacitance is 400 pF at 100V. The MOSFET is surface mounted in a TO-252 (DPak) package. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.94 | $2.94 |
| 10+ | $1.91 | $1.91 |
| 100+ | $1.31 | $1.31 |
| 500+ | $1.06 | $1.06 |
| 1,000+ | $1.00 | $1.00 |
| 2,500+ | $0.94 | $0.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 800V.
The MOSFET is available in a TO-252-3 (DPak) surface mount package.
Yes, it is marked as RoHS3 compliant, but this status is unverified.