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FCD260N65S3 N-Channel MOSFET from onsemi's SUPERFET III Easy Drive series. Rated for 650V drain-source voltage and 12A continuous drain current with 260mΩ maximum on-resistance.
Mfr Part #:

FCD260N65S3

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from onsemi's SUPERFET III Easy Drive series. Rated for 650V drain-source voltage and 12A continuous drain current with 260mΩ maximum on-resistance.
Total Stock: 7,750 pcs
$ Price Range: $0.74 - $2.02

FCD260N65S3 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,750 pcs
6750 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FCD260N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Avalanche Current
Current
Drain Current (Maximum @ Tc=100 °C)
Drain Current, Pulsed
Drain to Source Voltage (Vdss)
Drain-Source On-Resistance (Typical)
Drive Voltage (Max Rds On, Min Rds On)
Effective Output Capacitance (Typical)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
MOSFET dv/dt
Mounting Type
Operating Temperature
Peak Diode Recovery dv/dt
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Repetitive Avalanche Energy
Single Pulsed Avalanche Energy
Storage Temperature
Supplier Device Package
Tape & Reel
Tape & Reel Quantity
Technology
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Vgs (Max)
Vgs(th) (Max) @ Id
drain_source_voltage (Maximum @ TJ=150 °C)
gate_charge_total (Typical)

FCD260N65S3 Description

Short technical summary and product information.

The FCD260N65S3 is an N-Channel power MOSFET from onsemi's SUPERFET III Easy Drive series. It utilizes charge balance technology to achieve low on-resistance and low gate charge, minimizing conduction losses and enabling efficient switching performance. The device is rated for a maximum drain-source voltage of 650V (700V at Tj=150°C) and a continuous drain current of 12A at 25°C case temperature.

 

Key electrical characteristics include a typical on-resistance of 222mΩ, a maximum gate charge of 24nC at 10V, and an input capacitance of 1010pF at 400V drain-source voltage. The device is 100% avalanche tested and features a single pulsed avalanche energy rating of 57mJ. It is designed to withstand high dv/dt rates, making it suitable for robust power conversion applications.

 

The FCD260N65S3 is housed in a surface-mount D-PAK (TO-252) package, specifically the TO-252AA supplier device package. It is supplied in tape and reel packaging with a quantity of 2500 units per reel. The device is Pb-Free and RoHS compliant.

FCD260N65S3 Quick Information

Product Type: MOSFET
Series: Easy Drive
Canonical Name: FCD260N65S3
Subcategory: N-Channel MOSFET

FCD260N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCD260N65S3 Estimated Pricing

Qty Low High
1+ $2.02 $2.02
10+ $1.51 $1.51
100+ $1.21 $1.21
500+ $0.97 $0.97
1,000+ $0.90 $0.90
2,500+ $0.76 $0.76
5,000+ $0.74 $0.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCD260N65S3 Features

  • 650V drain-source voltage rating.
  • 12A continuous drain current at 25°C.
  • 260mΩ maximum on-resistance at 10V gate drive.
  • Low gate charge of 24nC for efficient switching.
  • 100% avalanche tested for ruggedness.

FCD260N65S3 Applications

  • Used in computing and display power supplies.
  • Suitable for telecom and server power supplies.
  • Ideal for industrial power supply designs.
  • Applicable in lighting, charger, and adapter circuits.

FCD260N65S3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCD260N65S3?

The maximum drain-source voltage (Vdss) is 650V. At a junction temperature of 150°C, the rating is 700V.

What is the maximum continuous drain current?

The maximum continuous drain current is 12A at a case temperature of 25°C, and 7.6A at 100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 260mΩ at a drain current of 6A and gate-source voltage of 10V. The typical on-resistance is 222mΩ.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FCD260N65S3 available in?

It is available in a surface-mount D-PAK (TO-252) package, specifically the TO-252AA supplier device package.

Is the FCD260N65S3 RoHS compliant?

Yes, the device is Pb-Free and RoHS compliant according to the datasheet.

What is the total gate charge of the FCD260N65S3?

The maximum total gate charge is 24nC at a gate-source voltage of 10V.

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