FCD1300N80Z FCD1300N80Z is an N-Channel MOSFET from On Semiconductor with an 800V drain-source breakdown voltage and 4A continuous drain current.
Mfr Part #:

FCD1300N80Z

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCD1300N80Z is an N-Channel MOSFET from On Semiconductor with an 800V drain-source breakdown voltage and 4A continuous drain current.
✓ Total Stock: 9,405 pcs
$ Price Range: $1.06 - $3.10

FCD1300N80Z Available from 3 distributors

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✓ Non-Authorised
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7,305 pcs
7305 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,100 pcs
1100 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
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FCD1300N80Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCD1300N80Z Description

Short technical summary and product information.

The FCD1300N80Z is an N-Channel power MOSFET manufactured by ON Semiconductor. It features a drain-to-source breakdown voltage of 800V and a continuous drain current rating of 4A. The device has a maximum on-resistance of 1.3 Ohms at a gate drive voltage of 10V and a drain current of 2A.

 

This MOSFET is designed for surface mount assembly and is offered in a TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA. It can operate over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 52W.

 

The device features a typical gate charge of 21 nC at 10V and an input capacitance of 880 pF at a drain-source voltage of 100V. The maximum gate threshold voltage is 4.5V at a drain current of 400 µA.

FCD1300N80Z Quick Information

Product Type: MOSFET
Series: SuperFET II
Canonical Name: FCD1300N80Z N-Channel MOSFET
Subcategory: N-Channel MOSFET

FCD1300N80Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCD1300N80Z Estimated Pricing

Qty Low High
1+ $3.10 $3.10
10+ $1.92 $1.92
100+ $1.39 $1.39
500+ $1.12 $1.12
1,000+ $1.08 $1.08
2,500+ $1.06 $1.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCD1300N80Z Features

  • N-Channel MOSFET with 800V drain-source breakdown voltage.
  • Continuous drain current rating of 4A.
  • Maximum on-resistance of 1.3 Ohms at 10V gate drive.
  • Surface mount package in TO-252-3 (DPak).
  • Operating junction temperature range of -55°C to 150°C.

FCD1300N80Z Applications

  • Suitable for high-voltage switching power supplies.
  • Used in AC-DC converters and inverters.
  • Ideal for power factor correction circuits.
  • Applicable in LED lighting drivers.

FCD1300N80Z FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCD1300N80Z?

The drain-to-source breakdown voltage is 800V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4A.

What is the on-resistance of the FCD1300N80Z?

The maximum on-resistance is 1.3 Ohms at a gate voltage of 10V and a drain current of 2A.

What package is the FCD1300N80Z available in?

It is available in a surface mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FCD1300N80Z RoHS compliant?

The part is listed as RoHS3 Compliant, but this information is unverified.

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