FCB260N65S3 FCB260N65S3 is a 650V, 12A N-Channel power MOSFET in D2PAK package. It features low on-resistance and low gate charge for efficient power conversion.
Mfr Part #:

FCB260N65S3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCB260N65S3 is a 650V, 12A N-Channel power MOSFET in D2PAK package. It features low on-resistance and low gate charge for efficient power conversion.
✓ Total Stock: 8 pcs
$ Price Range: $1.91 - $4.79

FCB260N65S3 Available from 1 distributor

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FCB260N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCB260N65S3 Description

Short technical summary and product information.

The FCB260N65S3 is an N-Channel power MOSFET from onsemi's SUPERFET III family, designed for high-voltage power conversion. It has a drain-source breakdown voltage of 650V (700V at TJ=150°C) and a continuous drain current of 12A at TC=25°C. The device features a maximum on-resistance of 260mΩ at VGS=10V and ID=6A, with a typical value of 222mΩ, and a low gate charge of 24nC, enabling efficient switching.

 

This MOSFET is suitable for applications such as telecom/server power supplies, industrial power supplies, and UPS/solar systems. It is 100% avalanche tested and can withstand high dv/dt rates, making it robust for demanding power stages. The device is available in a surface-mount D2PAK (TO-263) package, which offers good thermal performance with a junction-to-case thermal resistance of 1.39°C/W.

 

The FCB260N65S3 is Pb-Free and RoHS compliant, meeting environmental standards. It operates over a junction temperature range of -55°C to 150°C, providing reliable performance in a wide range of operating conditions.

FCB260N65S3 Quick Information

Product Type: Power MOSFET
Series: SUPERFET/C0041 III
Canonical Name: N-Channel Power MOSFET, 650V, 12A, D2PAK
Subcategory: Single N-Channel MOSFET

FCB260N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCB260N65S3 Estimated Pricing

Qty Low High
1+ $4.79 $4.79
10+ $3.17 $3.17
100+ $2.61 $2.61
500+ $1.97 $1.97
800+ $1.91 $1.91

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCB260N65S3 Features

  • 650V drain-source breakdown voltage.
  • 12A continuous drain current at 25°C.
  • Low on-resistance: 260mΩ max.
  • Ultra low gate charge: 24nC.
  • RoHS compliant and Pb-Free.

FCB260N65S3 Applications

  • Ideal for telecom power supplies.
  • Used in server power supplies.
  • Suitable for industrial power supplies.
  • Works in UPS and solar systems.

FCB260N65S3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCB260N65S3?

The maximum drain-source voltage is 650V.

What is the maximum continuous drain current?

The maximum continuous drain current is 12A at TC=25°C.

What is the on-resistance of the FCB260N65S3?

The maximum on-resistance is 260mΩ at VGS=10V and ID=6A, with a typical value of 222mΩ.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FCB260N65S3 RoHS compliant?

Yes, the device is RoHS compliant and Pb-Free.

What package is the FCB260N65S3 available in?

The device is available in a D2PAK (TO-263) surface-mount package.

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