| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
121,600 pcs
|
121600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,712 pcs
|
7712 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCB20N60TM is an N-Channel power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-voltage switching applications requiring efficient power management.
Key electrical specifications include a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C case temperature. The device features a maximum on-resistance (Rds(on)) of 190mOhm at a gate drive voltage of 10V and a drain current of 10A. The gate threshold voltage is 5V maximum at 250µA drain current. Total gate charge is 98nC at 10V, and input capacitance is 3080pF at 25V drain-source voltage.
The FCB20N60TM is offered in a TO-263-3 (D²Pak) surface mount package, also known as D²PAK (TO-263) supplier device package. It supports a maximum power dissipation of 208W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C. The maximum gate-source voltage is ±30V.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.09 | $7.09 |
| 10+ | $4.78 | $4.78 |
| 100+ | $3.47 | $3.47 |
| 800+ | $3.47 | $3.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 600V.
The maximum continuous drain current (Id) is 20A at a case temperature of 25°C.
The maximum on-resistance (Rds(on)) is 190mOhm at a gate-source voltage of 10V and drain current of 10A.
It is available in a TO-263-3 (D²Pak) surface mount package, also known as D²PAK (TO-263).
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at a drain current of 250µA.
The maximum total gate charge (Qg) is 98nC at a gate-source voltage of 10V.