| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCB20N60F-F085 is an N-Channel power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications, with a maximum drain-to-source voltage of 600V and continuous drain current of 20A. The device features a low on-resistance of 195 mΩ (max) at 20A and 10V gate drive, reducing conduction losses. The gate charge is 102 nC at 10V and input capacitance is 2035 pF at 25V, making it suitable for medium-frequency switching. The maximum power dissipation is 405W at case temperature. The device is packaged in a TO-263-3 (D²Pak) surface mount package, which offers good thermal performance. The operating junction temperature range is -55°C to 150°C. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited floor life).
| Qty | Low | High |
|---|---|---|
| 1+ | $7.21 | $7.21 |
| 10+ | $4.82 | $4.82 |
| 100+ | $3.14 | $3.14 |
| 800+ | $2.66 | $2.66 |
| 2,400+ | $2.65 | $2.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The device is available in TO-263-3 (D²Pak) surface mount package.
The junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant (unverified).
The maximum on-resistance is 195 mΩ at 20A and 10V gate drive.
The maximum gate threshold voltage is 5V at 250µA.