| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCB199N65S3 is a high-voltage N-Channel MOSFET from onsemi's SUPERFET III family, utilizing charge balance technology for low on-resistance and low gate charge. It is designed for power systems requiring high efficiency and miniaturization.
Key specifications include a drain-source voltage of 650V, continuous drain current of 14A, and maximum on-resistance of 199mOhm at 10V gate drive. The device features ultra-low gate charge (30nC typical) and low effective output capacitance for superior switching performance. It is 100% avalanche tested and rated for operation from -55°C to 150°C.
The MOSFET is suitable for telecom/server power supplies, industrial power supplies, UPS, and solar applications. It is offered in a D2PAK (TO-263) surface mount package, enabling compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.35 | $5.35 |
| 10+ | $3.56 | $3.56 |
| 100+ | $2.53 | $2.53 |
| 500+ | $2.12 | $2.12 |
| 800+ | $2.12 | $2.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
14A.
199mOhm maximum at 10V gate drive.
30nC typical at 10V.
-55°C to 150°C.
D2PAK (TO-263) surface mount package.
Yes, RoHS3 compliant (unverified).