| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
942 pcs
|
942 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
305 pcs
|
305 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCB11N60TM is an N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-source voltage rating of 600V and a continuous drain current of 11A at case temperature. The device has a maximum on-resistance of 380 mOhm at 5.5A and 10V gate drive. It is designed for high-efficiency power switching applications.
The MOSFET utilizes MOSFET (Metal Oxide) technology and offers a maximum power dissipation of 125W. It has a gate threshold voltage of 5V at 250µA and a maximum gate-source voltage of ±30V. Input capacitance is 1490 pF at 25V, and gate charge is 52 nC at 10V.
The device is surface mount packaged in a D2PAK (TO-263) case, which is suitable for automated assembly. The operating junction temperature range is -55°C to 150°C. This component is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $4.89 | $4.89 |
| 10+ | $3.23 | $3.23 |
| 100+ | $2.29 | $2.29 |
| 500+ | $1.97 | $1.97 |
| 800+ | $1.97 | $1.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FCB11N60TM is available in a D2PAK (TO-263) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant (unverified).
600V.
11A at case temperature.
380 mOhm maximum at 5.5A and 10V gate drive.
52 nC maximum at 10V.