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FCB110N65F The FCB110N65F is an N-Channel MOSFET from On Semiconductor, rated for 650V drain-source voltage and 35A continuous drain current. It features a low on-resistance of 110mOhm and is housed in a D2PAK (TO-263) surface-mount package.
Mfr Part #:

FCB110N65F

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FCB110N65F is an N-Channel MOSFET from On Semiconductor, rated for 650V drain-source voltage and 35A continuous drain current. It features a low on-resistance of 110mOhm and is housed in a D2PAK (TO-263) surface-mount package.
✓ Total Stock: 2,749 pcs
$ Price Range: $3.97 - $8.32

FCB110N65F Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
1,600 pcs
On Request
1600 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,149 pcs
On Request
1149 pcs On Request 1 On Request On Request On Request On Request On Request
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FCB110N65F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCB110N65F Description

Short technical summary and product information.

The FCB110N65F is an N-Channel power MOSFET manufactured by ON Semiconductor, designed for high-voltage switching applications. It utilizes MOSFET (Metal Oxide) technology and is rated for a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 35A at 25°C case temperature.

 

Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 110mOhm at Id=17.5A and Vgs=10V, a maximum gate threshold voltage (Vgs(th)) of 5V at Id=3.5mA, and a total gate charge (Qg) of 145nC at Vgs=10V. The input capacitance (Ciss) is 4895pF at Vds=100V. The device can dissipate up to 357W of power at Tc=25°C and operates over a junction temperature range of -55°C to 150°C.

 

The FCB110N65F is offered in a surface-mount D2PAK (TO-263) package, which is suitable for automated assembly and space-constrained designs. It is RoHS3 compliant and has an MSL of 1 (unlimited). This MOSFET is appropriate for power conversion circuits, such as switch-mode power supplies and motor drives, where high efficiency and reliability are required.

FCB110N65F Quick Information

Product Type: MOSFET
Canonical Name: FCB110N65F N-Channel MOSFET
Subcategory: Power MOSFET

FCB110N65F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCB110N65F Estimated Pricing

Qty Low High
1+ $8.32 $8.32
10+ $5.65 $5.65
100+ $4.14 $4.14
500+ $3.97 $3.97
800+ $3.97 $3.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCB110N65F Features

  • N-Channel MOSFET rated for 650V drain-source voltage.
  • Continuous drain current of 35A at 25°C case temperature.
  • Low on-resistance of 110mOhm maximum at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package for compact designs.
  • RoHS3 compliant with MSL 1 moisture sensitivity level.

FCB110N65F Applications

  • Suitable for switch-mode power supply designs.
  • Used in motor control and drive circuits.
  • Ideal for high-voltage DC-DC converter applications.
  • Applicable in power factor correction stages.
  • Used in industrial power switching systems.

FCB110N65F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCB110N65F?

The maximum drain-source voltage (Vdss) is 650V.

What is the continuous drain current rating of the FCB110N65F?

The continuous drain current (Id) is 35A at Tc=25°C.

What is the on-resistance of the FCB110N65F?

The maximum drain-source on-resistance (Rds(on)) is 110mOhm at Id=17.5A and Vgs=10V.

What is the operating temperature range of the FCB110N65F?

The operating junction temperature range is -55°C to 150°C.

Is the FCB110N65F RoHS compliant?

Yes, the FCB110N65F is RoHS3 compliant.

What package does the FCB110N65F come in?

The FCB110N65F is available in a surface-mount D2PAK (TO-263) package.

What is the gate charge of the FCB110N65F?

The maximum total gate charge (Qg) is 145nC at Vgs=10V.

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