| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCB099N65S3 is a high-voltage N-Channel Power MOSFET from On Semiconductor, part of the SUPERFET III Easy Drive series. It is designed for applications requiring high efficiency and fast switching, such as telecom/server power supplies, industrial power supplies, and UPS/solar systems.
Key electrical specifications include a drain-to-source voltage of 650V (700V at TJ=150°C), continuous drain current of 30A at 25°C (19A at 100°C), and a maximum on-resistance of 99mOhm at Vgs=10V. The device features ultra-low gate charge (typical 61nC) and low effective output capacitance (typical 544pF), enabling efficient switching performance.
The MOSFET is housed in a D2PAK-3 (TO-263-3) surface mount package, suitable for automated assembly. It is 100% avalanche tested and supports high dv/dt rates. The device is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.45 | $7.45 |
| 10+ | $5.04 | $5.04 |
| 100+ | $3.31 | $3.31 |
| 500+ | $3.03 | $3.03 |
| 800+ | $2.85 | $2.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650V (700V at TJ=150°C).
It is available in a D2PAK-3 (TO-263-3) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free as per the datasheet.
The maximum gate charge is 61nC at Vgs=10V.
The maximum on-resistance is 99mOhm at Id=15A, Vgs=10V; typical is 79mOhm.
The single pulsed avalanche energy is 145mJ.