| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,820 pcs
|
2820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCA20N60F is an N-Channel MOSFET from On Semiconductor, part of the SUPERFET family with FRFET technology. It features a drain-source voltage rating of 600V and a continuous drain current of 20A at 25°C (12.5A at 100°C). The maximum on-resistance is 190mΩ at 10A gate drive, with a typical value of 150mΩ. Gate charge is 98nC max, and input capacitance is 3080pF. The device is avalanche tested with a single pulse avalanche energy rating of 690mJ and avalanche current of 20A. The body diode has a fast reverse recovery time of 160ns typical. Operating temperature range is -55°C to 150°C. The MOSFET is housed in a through-hole TO-3P-3 / SC-65-3 package (TO-3PN) and is Pb-Free and RoHS compliant. It is suitable for switching power applications such as PFC, server/telecom power, LCD/LED TV power, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.70 | $7.70 |
| 10+ | $4.46 | $4.46 |
| 120+ | $3.77 | $3.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V maximum.
TO-3P-3, SC-65-3 (TO-3PN).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified from database, datasheet indicates Pb-Free).
20A at 25°C, 12.5A at 100°C, pulsed 60A.
190mΩ maximum at 10A, 10V; typical 150mΩ.
98nC maximum at 10V; typical 75nC.