| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCA20N60-F109 is a 600V, 20A N-Channel power MOSFET from On Semiconductor, utilizing advanced MOSFET technology. It is designed for high-efficiency switching applications. The device offers a low on-resistance of 190mOhm at 10V gate drive, with a maximum gate charge of 98nC. The input capacitance is 3080pF at 25V drain-source. The MOSFET is housed in a through-hole TO-3PN package, compatible with TO-3P-3 and SC-65-3 footprints. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 208W. The part is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $7.78 | $7.78 |
| 10+ | $4.51 | $4.51 |
| 120+ | $3.78 | $3.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
Through-hole TO-3PN (compatible with TO-3P-3 and SC-65-3).
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
20A at case temperature.
190mOhm at Id=10A, Vgs=10V.
98nC at Vgs=10V.