Mfr Part #:

FBG20N18BSH

Name: FBG20N18BSH
Brand: EPC Space, LLC
SKU: FBG20N18BSH

Mfr Name: EPC Space, LLC

Description:

GAN FET HEMT 200V 18A 4FSMD-B

Stock on Request

FBG20N18BSH Description

Short technical summary and product information.

GAN FET HEMT 200V 18A 4FSMD-B

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	EPC Space, LLC
Current	18A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 100 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	28mOhm @ 18A, 5V
Supplier Device Package	4-SMD
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	+6V, -4V
Vgs(th) (Max) @ Id	2.5V @ 3mA