| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Configuration | |
| Mounting Style | |
| Package / Case | |
| Technology | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time |
The Infineon FB20R06KL4 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) module. It is designed for power applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum collector-emitter voltage of 600V and a continuous collector current of 25A at 25°C. The module features a typical collector-emitter saturation voltage of 1.95V, with a turn-on time of 68ns and a turn-off time of 192ns. The maximum gate-emitter voltage is ±20V.
This IGBT module operates within a temperature range of -40°C to +125°C. It is housed in an EASY2 package and utilizes a Screw mounting style for secure installation.
The FB20R06KL4 is built using silicon transistor element material and is classified under the IGBT2 Low Loss technology. Its configuration is a PIM Single Phase Input Rectifier.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600 V.
The continuous collector current is 25 A at 25 C.
The typical collector-emitter saturation voltage is 1.95 V.
The turn-on time is 68 ns and the turn-off time is 192 ns.
The operating temperature range is -40 C to +125 C.
This IGBT module uses the EASY2 package.
This IGBT module is mounted using screws.