| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
658 pcs
|
658 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Channel Type | |
| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Input Type | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| Supplier Device Package | |
| Voltage |
The FAN7191MX-F085 from ON Semiconductor is a half-bridge based gate driver designed for driving IGBT and N-Channel MOSFETs. This component operates within a voltage range of 10V to 22V and features independent channels with a current rating of 4.5A per channel. It supports logic voltages of 0.8V and 2.5V, with a high side voltage capability of 600V.
The device is housed in an 8-SOIC package, suitable for surface mount applications. It operates across a temperature range of -40°C to 125°C (TA). The driver offers a rise time of 25ns, making it suitable for applications requiring fast switching.
Key electrical characteristics include dual logic voltage inputs and independent channel control. The non-inverting input type and half-bridge configuration are standard for many power switching applications. Its robust design supports demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 10V to 22V.
The package is 8-SOIC (0.154", 3.90mm Width).
The operating temperature range is -40°C to 125°C.
The high side voltage rating is 600V.
It has 2 independent drivers.
It supports IGBT and N-Channel MOSFET gates.
The rise time is 25ns.